ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,781, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Marcus Johannes Henricus Van Dal (Linden, Belgium) and Gerben Doornbos (Kessel-Lo, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a power switch circuit and a logic circuit. The semiconductor device includes a first dielectric layer and a thin film transistor (TFT) formed on the first dielectric layer. The TFT includes a semiconductor nano-sheet, a gate dielectric layer wrapping around a channel region of the semiconductor nano-sheet,...