ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,824, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Wang-Chun Huang (Kaohsiung City, Taiwan), Hou-Yu Chen (Hsinchu County, Taiwan), Kuan-Lun Cheng (Hsinchu City, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a channel layer, a gate structure, a first source/drain structure, a second source/drain structure, and a backside via. The gate structure surrounds the channel layer. The first source/drain structure and the second source/drain structure ate connected to the channel layer. The backsid...