US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Power control circuit for memory circuit based on complementary field effect transistor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,562,211, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Power control circuit for memory circuit based on complementary field effect transistor devices" was invented by Chien-Chen Lin (Hsinchu, Taiwan), Shang Lin Wu (Hsinchu, Taiwan), Yen Lin Chung (Hsinchu, Taiwan) and Chia-Che Chung (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a first transistor having a first-type channel and a second transistor having a second-type channel at a front side of a substrate. The first transistor is stacked over the second transistor. The integrated circuit de...