US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Method for forming sidewall spacers disposed above mask layer and semiconductor devices fabricated thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,816, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming sidewall spacers disposed above mask layer and semiconductor devices fabricated thereof" was invented by Kuan-Ting Pan (Taipei, Taiwan), Yi-Ruei Jhan (Keelung, Taiwan), Chih-Hao Wang (Hsinchu, Taiwan), Shi Ning Ju (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan) and Kuan-Lun Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a method of forming sidewall spacers by filling a trench between a hybrid fin and a semiconductor fin structure. The sidewall spacer ...