US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Memory devices configured with adaptive word line pulse adjustment and methods for operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,562,213, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory devices configured with adaptive word line pulse adjustment and methods for operating the same" was invented by Chia-Cheng Chen (Hsinchu, Taiwan), Yu Jie Hsiao (Hsinchu, Taiwan) and Ching-Wei Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array comprising a plurality of word lines, the plurality of word lines operatively coupled to a plurality of sets of memory cells, respectively. The memory device includes a controller operatively coupled to the memory array, and comprising an adaptive...