US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,736, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method of forming the same" was invented by Chao-I Wu (Hsinchu County, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan), Sai-Hooi Yeong (Hsinchu County, Taiwan) and Han-Jong Chia (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a memory device and a method of forming the same. The memory device includes a first tier on a substrate and a second tier on the first tier. The first tier includes a first layer stack; a first gate electrode penetrating through the first layer stack; a first channel layer between the fi...