US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Memory device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,721, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device and method for forming the same" was invented by Meng-Sheng Chang (Hsinchu County, Taiwan), Chia-En Huang (Hsinchu County, Taiwan) and Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An OTP memory device includes a substrate, a first transistor, a second transistor, a first word line, second word line, and a bit line. The first transistor includes a first gate structure, and first and second source/drain regions on opposite sides of the first gate structure. The second transistor is operable in an inversi...