ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,043, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Manufacturing method for semiconductor device" was invented by Te-Hsin Chiu (Hsinchu, Taiwan), Wei-An Lai (Hsinchu, Taiwan), Meng-Hung Shen (Hsinchu, Taiwan), Wei-Cheng Lin (Hsinchu, Taiwan), Jiann-Tyng Tzeng (Hsinchu, Taiwan) and Kam-Tou Sio (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a semiconductor structure includes defining a first recess in an insulation layer. The method further includes forming a protection layer along a sidewall of the first recess. The method further includes forming a first con...