US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 24 for "Magnetic memory device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,975, issued on Feb. 24, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Magnetic memory device and method for manufacturing the same" was invented by Hung-Cho Wang (Hsinchu, Taiwan), Sheng-Huang Huang (Hsinchu, Taiwan), Yuan-Jen Lee (Hsinchu, Taiwan), Jiunyu Tsai (Hsinchu, Taiwan), Keng-Ming Kuo (Hsinchu, Taiwan), Jun-Yao Chen (Hsinchu, Taiwan) and Harry-Hak-Lay Chuang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory unit and a shielding element disposed on the memory unit. The memory unit includes a bottom electrode, a memory element disposed on the bottom electrod...