US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Generation of physically unclonable function using one-time-programmable memory devices with back-end-of-line transistors" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,061, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Generation of physically unclonable function using one-time-programmable memory devices with back-end-of-line transistors" was invented by Meng-Sheng Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an anti-fuse memory cell that randomly presents either a first logic state or a second logic state. The memory cell is formed on a frontside of a substrate and at least includes a first programming transistor that is formed in a first one of a plurality of metallization layers disposed over the frontside an...