US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Cut metal gate processes" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,803, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Cut metal gate processes" was invented by Shu-Uei Jang (Hsinchu, Taiwan), Ya-Yi Tsai (Hsinchu, Taiwan), Ryan Chia-Jen Chen (Hsinchu, Taiwan), An Chyi Wei (Hsinchu, Taiwan) and Shu-Yuan Ku (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes etching a gate stack to form a trench extending into the gate stack, forming a dielectric layer on a sidewall of the gate stack, with the sidewall exposed to the trench, and etching the dielectric layer to remove a first portion of the dielectric lay...