US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 24 for "Composite gate dielectric for high-voltage device" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,812, issued on Feb. 24, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Composite gate dielectric for high-voltage device" was invented by Jhu-Min Song (Nantou, Taiwan), Ying-Chou Chen (Taichung, Taiwan), Yi-Kai Ciou (Taoyuan, Taiwan), Chien-Chih Chou (New Taipei, Taiwan), Fei-Yun Chen (Hsinchu, Taiwan), Yu-Chang Jong (Hsinchu, Taiwan) and Chi-Te Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip. The integrated chip includes a substrate having one or more interior surfaces forming a recess within an upper surface of the substrate. Source/drain regi...