ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,335, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Transistor structure" was invented by Chen-Liang Chu (Hsinchu, Taiwan), Chien-Chih Chou (New Taipei, Taiwan), Ta-Yuan Kung (New Taipei, Taiwan), Chun-Hsun Lee (Hsinchu, Taiwan), Chih-Wen Yao (Hsinchu, Taiwan), Yi-Huan Chen (Hsinchu, Taiwan) and Ming-Ta Lei (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Transistors with improved saturation drain current and methods for making such transistors are disclosed. The gate is formed in the shape of a longitudinal trench and a plurality of lateral trenches below the longitudinal trench...