US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Semiconductor structure including multiple barrier layers and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,619, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure including multiple barrier layers and method for forming the same" was invented by Jun-Nan Nian (Tainan, Taiwan), Yao-Hsiang Liang (Hsinchu, Taiwan), Ju Po Tung (Tainan, Taiwan), Chieh-Min Liu (Tainan, Taiwan) and Ming-Ching Chung (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure. The semiconductor structure includes: a substrate; a transistor on the substrate; a first dielectric layer over the transistor; a second dielectric layer over the first die...