US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "Semiconductor device with connecting structure having a doped layer and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,623, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device with connecting structure having a doped layer and method for forming the same" was invented by Kuo-Ju Chen (Taichung, Taiwan), Chun-Hsien Huang (Hsinchu, Taiwan), Su-Hao Liu (Jhongpu Township, Taiwan), Liang-Yin Chen (Hsinchu, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A connecting structure includes a first dielectric layer disposed over a substrate and a conductive feature, a doped dielectric layer disposed over the first dielectric layer, a firs...