US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,258, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Tetsu Ohtou (Hsinchu, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsinchu, Taiwan), Yasutoshi Okuno (Hsinchu, Taiwan) and Jiun-Jia Huang (Yunlin County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device incudes a substrate. A first fin and a second fin are over the substrate. An isolation structure is laterally between the first fin and the second fin. A gate structure crosses the first fin and the second fin. A first source/drain epitaxy structure i...