US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "Method of forming semiconductor device using wet etching chemistry" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,577, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming semiconductor device using wet etching chemistry" was invented by Meng-Hsien Li (Hsinchu, Taiwan), Ying-Chuen Wang (Taichung, Taiwan), Chieh-Yi Shen (Taipei, Taiwan), Li-Min Chen (Hsinchu County, Taiwan), Ming-Hsi Yeh (Hsinchu, Taiwan) and Kuo-Bin Huang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure is provided. The...