US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Method of forming deep trench isolation in radiation sensing substrate and image sensor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,401, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsin-Chu, Taiwan).

"Method of forming deep trench isolation in radiation sensing substrate and image sensor device" was invented by Chi-Ming Lu (Kaohsiung, Taiwan), Chih-Hui Huang (Yongkang, Taiwan), Jung-Chih Tsao (Tainan, Taiwan), Yao-Hsiang Liang (Hsinchu, Taiwan), Chih-Chang Huang (Chiayi, Taiwan) and Ching-Ho Hsu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion resistive layer in the trenc...