US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Metal-insulator-metal (MIM) capacitor with a top electrode having an oxygen-enriched portion" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,307, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Metal-insulator-metal (MIM) capacitor with a top electrode having an oxygen-enriched portion" was invented by Gulbagh Singh (Hsinchu, Taiwan) and Tsung-Han Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first conductive material, a dielectric structure extending over a top surface of the first conductive material, the dielectric material having a first portion with a first thickness, and a second portion with a second thickness, and a third portion with a third thickness between the first...