ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,403, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"High density image sensor" was invented by Seiji Takahashi (Hsinchu, Taiwan), Chen-Jong Wang (Hsin-Chu, Taiwan), Dun-Nian Yaung (Taipei, Taiwan), Jhy-Jyi Sze (Hsin-Chu, Taiwan) and Yimin Huang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a CMOS image sensor having a doped isolation structure separating a photodiode and a pixel device, and an associated method of formation. In some embodiments, the CMOS image sensor has a vertical transfer gate extending vertically from a front-side of a substrat...