US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "Gate-all-around field-effect transistor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,314, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate-all-around field-effect transistor device" was invented by Wei-Ting Chien (Hsinchu, Taiwan), Liang-Yin Chen (Hsinchu, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes: forming semiconductor fin structures over a substrate, where each of the semiconductor fin structures includes a layer stack over a semiconductor fin, the layer stack including alternating layers of a first semiconductor material and a second semiconductor material; forming a capping lay...