ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,568, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Conductive feature formation and structure" was invented by Cheng-Wei Chang (Taipei, Taiwan), Min-Hsiu Hung (Tainan, Taiwan), Hung-Yi Huang (Hsinchu, Taiwan), Chun Chieh Wang (Kaohsiung, Taiwan) and Yu-Ting Lin (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The se...