US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 10 for "Transistor device with tapered gate contact profile" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,362, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Transistor device with tapered gate contact profile" was invented by Te-Chih Hsiung (Taipei, Taiwan), Jyun-De Wu (New Taipei, Taiwan), Peng Wang (Hsinchu, Taiwan) and Huan-Just Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a source region and a drain region over a substrate. The device further includes a gate structure at least partially between the source region and the drain region, and a gate contact over the gate structure. The gate contact has an upper portion and a lower portion below the upper portion...