US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 10 for "Semiconductor structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,352, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and manufacturing method thereof" was invented by Bo-Huan Hsin (Taichung, Taiwan) and Ying-Han Chiou (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a semiconductor fin upwardly extending from a substrate; forming a gate strip extending across the semiconductor fin; forming source/drain regions on the semiconductor fin and at opposite sides of the gate strip; forming a gate spacer on a sidewall of the gate strip; forming a film layer on the gate spacer; performing an etching proc...