US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 10 for "Semiconductor memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,624, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor memory device and method of forming the same" was invented by Yi-Cheng Chu (Hsinchu, Taiwan), Chung-Te Lin (Tainan, Taiwan), Kai-Wen Cheng (Taichung, Taiwan), Han-Ting Tsai (Hsinchu, Taiwan), Jung-Tsan Tsai (New Taipei, Taiwan), Pao-Yi Tai (Miaoli County, Taiwan) and Chien-Hua Huang (Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to a memory device. The memory device includes a substrate comprising an inter-metal dielectric layer having a metal line, a dielectric layer over the substr...