ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,685, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Protective composition and method of forming photoresist pattern" was invented by An-Ren Zi (Hsinchu, Taiwan), Ching-Yu Chang (Yilang County, Taiwan) and Chin-Hsiang Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a protective layer over a substrate edge and a photoresist over a substrate. Protective layer removed and photoresist exposed to radiation. Protective layer made of composition including acid generator and polymer having pendant acid-labile groups. Pendant acid-labile groups include polar...