US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 10 for "Memory device and operating method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,620, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device and operating method thereof" was invented by Yu-Wei Lin (Taichung, Taiwan), Meng-Sheng Chang (Hsinchu County, Taiwan) and Shao-Yu Chou (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided and including a memory array including multiple memory cells each including a memory unit; and a first number of first transistors coupled in series between the memory unit and a first voltage terminal. The memory device further includes a voltage generating circuit coupled between the memory array ...