US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 10 for "Gate capping structures in semiconductor devices" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,353, issued on Feb. 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate capping structures in semiconductor devices" was invented by Chung-Liang Cheng (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, and a gate structure disposed on the fin structure adjacent to the S/D region. The gate structure includes a gate stack disposed on the fin structure and a gate capping struc...