US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 10 for "Etch stop layer for removal of substrate in stacking transistors and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,418, issued on Feb. 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Etch stop layer for removal of substrate in stacking transistors and methods of forming the same" was invented by Yen Chuang (Hsinchu, Taiwan), Ji-Yin Tsai (Zhudong Township, Taiwan), Jet-Rung Chang (Hsinchu, Taiwan), Zheng Hui Lim (Hsinchu, Taiwan) and Ta-Chun Ma (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments utilize a silicon germanium layer deposited to a low germanium percentage under a substrate. The substrate is used to form a field effect transistor FET structure. After formation of the FET, the silicon germa...