US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 10 for "Epitaxial source/drain configurations for multigate devices" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,363, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Epitaxial source/drain configurations for multigate devices" was invented by Shahaji B More (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first multigate device, a second multigate device, and an isolation structure. The first multigate device has a first channel layer extending between first epitaxial source/drains along a first direction. The second multigate device has a second channel layer extending between second epitaxial source/drains along the first direction. The first epitaxial ...