US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 10 for "Electrostatic discharge prevention" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,451, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Electrostatic discharge prevention" was invented by Ting-Yun Wu (Taipei, Taiwan), Yen-Sen Wang (Hsinchu, Taiwan) and Chung-Yi Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides embodiments of semiconductor structures. A semiconductor structure according to the present disclosure includes a substrate, a fin-shaped structure disposed over the substrate, the fin-shaped structure including a plurality of first semiconductor layers interleaved by a plurality of second semiconductor layers, a g...