US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 10 for "Diffusion barrier to mitigate direct-shortage leakage in conductive bridging ram (CBRAM)" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,633, issued on Feb. 10, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Diffusion barrier to mitigate direct-shortage leakage in conductive bridging ram (CBRAM)" was invented by Chia-Wen Zhong (Taichung, Taiwan), Yen-Liang Lin (Yilan County, Taiwan) and Yao-Wen Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates an integrated chip structure. The integrated chip structure includes a bottom electrode disposed within a dielectric structure over a substrate. A top electrode is disposed within the dielectric structure over the bottom electrode. A switching layer and an ion so...