US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 10 for "Connection between gate and source/drain feature" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,408, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Connection between gate and source/drain feature" was invented by Jui-Lin Chen (Taipei, Taiwan), Chao-Hsun Wang (Taoyuan County, Taiwan), Hsin-Wen Su (Hsinchu, Taiwan), Yi-Feng Ting (Taipei, Taiwan), Chi Hua Wang (New Taipei, Taiwan), I-Hung Li (New Taipei, Taiwan), Yuan-Tien Tu (Chiayi County, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan), Mei-Yun Wang (Hsin-Chu, Taiwan), Ping-Wei Wang (Hsin-Chu, Taiwan) and Lien Jung Hung (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method according to the present disclosure includes forming a f...