US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 30 for "Method of manufacturing a semiconductor device and a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,938, issued on Dec. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device and a semiconductor device" was invented by Wen-Hsien Tu (New Taipei, Taiwan) and Wei-Fan Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a fin structure protruding from a first isolation insulating layer disposed over a substrate, and forming a dummy gate structure over an upper portion of the fin structure. The method further includes forming a second isolation insulating layer over the first isolation insulati...