US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 30 for "Interconnect structure including contact via over barrier layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,404, issued on Dec. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Interconnect structure including contact via over barrier layer" was invented by Ming-Han Lee (Taipei, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnect structure includes a via including a first barrier layer and a bulk layer disposed over the first barrier layer, and a conductive line disposed over a top surface of the via. The conductive line includes a conductive layer disposed over a top surface of the bulk layer, and a second barrier layer disposed on sidewalls of the conductive layer. ...