US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 30 for "Gate-all-around memory devices" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,148, issued on Dec. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Gate-all-around memory devices" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Static Random Access Memory (SRAM) cells and memory structures are provided. An SRAM cell according to the present disclosure includes a first pull-up gate-all-around (GAA) transistor and a first pull-down GAA transistor coupled to form a first inverter, a second pull-up GAA transistor and a second pull-down GAA transistor coupled to form a second inverter, a first pass-gate GAA transistor coupled to an output of th...