ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,068, issued on Dec. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure with resistor and capacitor" was invented by Ru-Shang Hsiao (Jhubei, Taiwan), Po-Ying Chen (Tainan, Taiwan), Chen-Bin Lin (Tainan, Taiwan), Jie Jay Sun (Hsinchu, Taiwan) and I-Shan Huang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a structure and a method directed to a semiconductor structure having a resistor structure and a metal-insulator-metal (MIM) capacitor structure formed by a single mask process. The semiconductor structure includes an interconnect structure on a ...