US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 23 for "Semiconductor structure with contact rail and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,438, issued on Dec. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure with contact rail and method for forming the same" was invented by Chun-Yuan Chen (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan), Chih-Hao Wang (Baoshan Township, Taiwan), Huan-Chieh Su (Tianzhong Township, Taiwan) and Kuo-Nan Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a gate electrode and a source/drain region over a bulk portion of a semiconductor substrate, forming a cut-metal-gate region to separate the gate electrode into a first portion and a second portion...