US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 23 for "Semiconductor device including germanium region disposed in semiconductor substrate" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,490, issued on Dec. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device including germanium region disposed in semiconductor substrate" was invented by Hung-Chang Chien (Hsinchu County, Taiwan), Jung-I Lin (Hsinchu, Taiwan), Ming-Chieh Hsu (Hsinchu, Taiwan), Kuan-Chieh Huang (Hsinchu, Taiwan), Tzu-Jui Wang (Fengshan, Taiwan), Shih-Min Huang (Hsinchu County, Taiwan), Chen-Jong Wang (Hsin-Chu, Taiwan), Dun-Nian Yaung (Taipei, Taiwan), Yi-Shin Chu (Hsinchu, Taiwan) and Hsiang-Lin Chen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure re...