US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 23 for "Metal gate structures and methods of fabricating the same in field-effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,429, issued on Dec. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Metal gate structures and methods of fabricating the same in field-effect transistors" was invented by Ru-Shang Hsiao (Hsinchu County, Taiwan), Ching-Hwanq Su (Tainan, Taiwan), Pin Chia Su (Tainan County, Taiwan), Ying Hsin Lu (Tainan, Taiwan) and I-Shan Huang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a dummy gate stack over a fin protruding from a semiconductor substrate, forming gate spacers on sidewalls of the dummy gate stack, forming source/features over portions of the fin, forming a gate trench...