US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 23 for "Memory cell device with thin-film transistor selector and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,419, issued on Dec. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory cell device with thin-film transistor selector and methods for forming the same" was invented by Yong-Jie Wu (Hsinchu, Taiwan), Yen-Chung Ho (Hsinchu, Taiwan), Hui-Hsien Wei (Taoyuan, Taiwan), Chia-Jung Yu (Hsinchu, Taiwan), Pin-Cheng Hsu (Zhubei, Taiwan), Mauricio Manfrini (Zhubei, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure, device, and method of making the same, the memory structure including: a channel comprising a semiconductor material; a source electrode electrically conn...