ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,001, issued on Dec. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Low-K feature formation processes and structures formed thereby" was invented by Wan-Yi Kao (Baoshan Township, Taiwan), Chung-Chi Ko (Nantou, Taiwan), Li Chun Te (Renwu Township, Taiwan), Hsiang-Wei Lin (New Taipei, Taiwan), Te-En Cheng (Taoyuan, Taiwan), Wei-Ken Lin (Tainan, Taiwan), Guan-Yao Tu (Hsinchu, Taiwan) and Shu Ling Liao (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modifi...