US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 23 for "Electrode structure for vertical group III-V device" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,456, issued on Dec. 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Electrode structure for vertical group III-V device" was invented by Yao-Chung Chang (Zhubei, Taiwan), Chun Lin Tsai (Hsin-Chu, Taiwan), Ru-Yi Su (Kouhu Township, Taiwan), Wei Wang (Taipei, Taiwan) and Wei-Chen Yang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure, the method includes forming a buffer layer over a substrate. An active layer is formed on the buffer layer. A top electrode is formed on the active layer. An ...