US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 2 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,488, issued on Dec. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and methods of forming the same" was invented by Chieh-Ping Wang (Taichung, Taiwan), Ting-Gang Chen (Taipei, Taiwan) and Tai-Chun Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming a semiconductor device structure are described. In some embodiments, the method includes forming fins from a substrate, forming a dummy gate stack over portions of the fins, forming epitaxial source/drain regions adjacent the dummy gate stack, depositing a first inter-layer dielectric (ILD) over the ...