ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,508, issued on Dec. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Chun-Chieh Wang (Kaohsiung, Taiwan), Yueh-Ching Pai (Taichung, Taiwan) and Huai-Tei Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a cap layer and a method for forming the same are disclosed. In an embodiment, a method includes epitaxially growing a first semiconductor layer over an N-well; etching the first semiconductor layer to form a first recess; epitaxially growing a second semiconductor layer filling the first recess; etching the second sem...