US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 2 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,063, issued on Dec. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Lin-Yu Huang (Hsinchu, Taiwan) and Chun-Hung Liao (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, at least two source/drain features, at least two source/drain features, one or more channel layers, a gate structure, a first conductive feature, a second conductive feature, and an alignment mark. The semiconductor substrate has a first region and a second region next to the first region. The at least two so...