ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,478, issued on Dec. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Tse-An Chen (Taoyuan, Taiwan), Lain-Jong Li (Hsinchu, Taiwan), Wen-Hao Chang (Hsinchu, Taiwan) and Chien-Chih Tseng (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a channel layer, an insulating layer, source/drain contacts, a gate dielectric layer, and a gate electrode. The channel layer over the substrate and includes two dimensional (2D) material. The insulating layer is on the channel layer. The source/drain contacts are over the channel layer. ...