US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 2 for "Reconstructed substrates for high I/O counts application and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,043, issued on Dec. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Reconstructed substrates for high I/O counts application and methods for forming the same" was invented by Hsien-Wei Chen (Hsinchu, Taiwan), Jing-Ye Juang (Hsinchu, Taiwan) and Shin-Puu Jeng (Po-Shan Village, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A package assembly includes a package substrate including a molding material layer and a plurality of substrate portions embedded in the molding material layer, a redistribution layer (RDL) structure on the package substrate, and a plurality of semiconductor devices on the RDL structure."

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