US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 2 for "Read assist circuit for memory device and operation method thereof" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,834, issued on Dec. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Read assist circuit for memory device and operation method thereof" was invented by Yorinobu Fujino (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided, including a first word line coupled to a first memory cell, a second word line coupled to a second memory cell, and a read assist circuit coupled between the first and second word lines, and in a first time period configured, in response to a first control signal, to adjust a voltage level of the first word line to a first voltage and to adjust a voltage l...