US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 2 for "One-time-programmable memory device including an antifuse structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,051, issued on Dec. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"One-time-programmable memory device including an antifuse structure and methods of forming the same" was invented by Meng-Sheng Chang (Chu-bei, Taiwan), Chia-En Huang (Xinfeng Township, Taiwan) and Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A one time programmable memory device includes a field effect transistor and an antifuse structure. A first node of the antifuse structure includes, or is electrically connected to, the drain region of the field effect transistor. The antifuse structure includes an antifuse dielectri...